Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

Authors

  • Thiago Hanna Both PGMICRO - Universidade Federal do Rio Grande do Sul (UFRGS)
  • Dalton Colombo PGMicro - Universidade Federal do Rio Grande do Sul (UFRGS)
  • Ricardo Vanni Dallasen PPGEE - Universidade Federal do Rio Grande do Sul (UFRGS)
  • Gilson Inácio Wirth PGMicro - Universidade Federal do Rio Grande do Sul (UFRGS)

Keywords:

Ionizing dose, Radiation, TID, Voltage reference

Abstract

http://dx.doi.org/10.5028/jatm.v5i3.227

The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 μm technology. The analysis will mainly focus on the effects of the parametric variations on different voltage references. Monte-Carlo analyses were performed in order to determine the effects of threshold voltage shifts in each transistor on the output voltage.


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Published

2013-08-27

Issue

Vol. 5 No. 3 (2013): Jul./Sep., 2013

Section

Original Papers

License

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