Analysis of Total Ionizing Dose Effects on 0.13µm Technology-Temperature-Compensated Voltage References

Thiago Hanna Both, Dalton Colombo, Ricardo Vanni Dallasen, Gilson Inácio Wirth


The purpose of this work is to briefly discuss the effects of the total ionizing dose (TID) on MOS devices in order to estimate the results of future irradiation tests on temperature-compensated voltage references that are implemented on a mixed-signal chip fabricated using IBM 0.13 μm technology. The analysis will mainly focus on the effects of the parametric variations on different voltage references. Monte-Carlo analyses were performed in order to determine the effects of threshold voltage shifts in each transistor on the output voltage.


Ionizing dose, Radiation; TID; Voltage reference

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